r07ds0001ej0100 rev.1.00 page 1 of 5 may 31, 2010 preliminary data sheet pa1932te mos field effect transistor description the pa1932te is a switching device, which can be driven directly by a 4.5 v power source. the pa1932te features a low on-state resistance and exce llent switching characteris tics, and is suitable for applications such as power switch of portable machine and so on. features ? v ds maximum ratings -30 v (t a = 25 c) ? 4.5 v drive available ? low on-state resistance ? r ds(on)1 = 38 m max. (v gs = -10 v, i d = -3.0 a) ? r ds(on)2 = 59 m max. (v gs = -4.5 v, i d = -3.0 a) package drawing (unit: mm) equivalent circuit 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 1 , 2, 5, 6 : drain 3 : gate 4 : source 0.4 ordering information part no. package pa1932te-t1-at note pa1932te-t2-at note sc-95 (mini mold thin type) note: this product does not contain pb in external electrode and other parts. "-t1", "-t2" indicates the unit orientation (8 mm embossed carrier tape, 3,000 p/reel). marking: ud absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss -30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) i d(dc) m 6.0 a drain current (pulse) note1 i d(pulse) m 24 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 2.0 w channel temperature t ch 150 c storage temperature t stg -55 to + 150 c single avalanche current note3 i as 6.0 a single avalanche energy note3 e as 3.6 mj notes 1. pw 10 s, duty cycle 1 % 2. mounted on a glass epoxy board of 2500 mm 2 x 1.6 mm , t 5 sec 3. starting t ch = 25 c, v dd = -15 v, r g = 25 , l = 100 h, v gs = -20 0 v r07ds0001ej0100 rev.1.00 may 31, 2010
pa1932te chapter title r07ds0001ej0100 rev.1.00 page 2 of 5 may 31, 2010 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circ uit is externally required if a voltage exceeding the rated voltage may be applied to this device. caution for electrostatic discharge this product is electrostatic-sensitive device due to low esd capability and should be handled with caution for electrostatic discharge. v esd 200 v typ. (c = 200 pf, r = 0 , single pulse) electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? 1 a v ds = ? 30 v, v gs = 0 v gate leakage current i gss m 10 a v gs = m 16 v, v ds = 0 v gate to source cut-off voltage v gs(off) ? 1.0 ? 1.6 ? 2.5 v v ds = ? 10 v, i d = ? 1.0 ma forward transfer admittance note | y fs | 2.5 5.0 s v ds = ? 10 v, i d = ? 3.0 a r ds(on)1 30 38 m v gs = ? 10 v, i d = ? 3.0 a drain to source on-state resistance note r ds(on)2 36 59 m v gs = ? 4.5 v, i d = ? 3.0 a input capacitance c iss 950 pf output capacitance c oss 210 pf reverse transfer capacitance c rss 170 pf v ds = ? 10 v v gs = 0 v f = 1.0 mhz turn-on delay time t d(on) 11 ns rise time t r 10 ns turn-off delay time t d(off) 73 ns fall time t f 30 ns v dd = ? 15 v, i d = ? 3.0 a, v gs = ? 10 v, r g = 6 total gate charge q g 20 nc gate to source charge q gs 2 nc gate to drain charge q gd 6 nc v dd = ? 24 v, v gs = ? 10 v, i d = ? 6.0 a body diode forward voltage note v f(s-d) 0.9 v i f = ? 6.0 a, v gs = 0 v reverse recovery time t rr 36 ns reverse recovery charge q rr 23 nc i f = ? 6.0a, v gs = 0 v, di/dt = ? 100a/ s note: pulsed test circuit 1 avalanche capability r g = 25 ? test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? % ? % % % ? % % % ? ?
pa1932te chapter title r07ds0001ej0100 rev.1.00 page 3 of 5 may 31, 2010 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c p t - total power dissipation - w 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175 mounted on a glass epoxy board of 2500 mm 2 x 1.6 mm t < 5sec t a - ambient temperature - c forward bias safe operating area i d - drain current - a -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 mounted on a glass epoxy board of 2500 mm 2 1.6 mm i d(pul se) i d(dc) r d s ( on ) l i m 1 i t e d (a t v g s = - 1 1 0 v ) t a = 2 5c sing le pulse 1 1 0 0 s 1 1 m 1 s 1 1 0 m 1 s 1 1 0 0 m 1 s 5 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width rth(ch-a) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse mounted on a glass epoxy board of 2500 mm 2 x 1.6 mm pw - pulse width ? s 100 1 m 10 m 100 m 1 10 100 1000
pa1932te chapter title r07ds0001ej0100 rev.1.00 page 4 of 5 may 31, 2010 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -5 -10 -15 -20 -25 -30 0 -0.2 -0.4 -0.6 -0.8 -1 -4.5 v pu ls e d v gs = -10 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -0 -1 -2 -3 -4 -5 v ds = - 10 v pu ls e d t a = 150 c 125 c 75 c 25 c - 25 c -55 c v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0 -1 -2 -3 -75 -25 25 75 1 25 1 75 v ds = - 10 v i d = - 1.0 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 -0.1 -1 -10 v ds = -10 v pu ls e d t a = 150 c 125 c 75 c 25 c -25 c -55 c i d - drain current - a drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 -0.1 -1 -10 -100 pu ls e d v gs = -4.5 v -10 v i d - drain current - a
pa1932te chapter title r07ds0001ej0100 rev.1.00 page 5 of 5 may 31, 2010 drain to source on-state resistance vs. channel temperature drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 -75 -25 25 75 125 175 v gs = -4.5 v -10 v i d = -3.0 a pu ls e d t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 -0 -5 -10 -15 -20 i d = -3.0 a pu ls e d v gs - gate to source voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1.0 mhz c iss c oss c rs s v ds - drain to source voltage - v td(on) , t r , t d(off), t f - switching time - ns 1 10 100 1000 -0.1 -1 -10 -100 v dd = -15 v v gs = -10 v r g = 6 t d(off) t f t d(on) t r i d - drain current - a dynamic input characteristics source to drain diode forward voltage v gs - gate to source voltage ? v -0 -2 -4 -6 -8 -10 -12 0 5 10 15 20 25 i d = -6.0 a 0 v dd = -6.0 v -15 v -24 v q g - gate charge - nc i f - diode forward current - a -0.1 -1 -10 -100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v gs = -10 v -4.5 v 0 v pu ls e d v f(s-d) - source to drain voltage - v
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history pa1932te description rev. date page summary 1.00 may 31, 2010 - first edition issued
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